Eindhoven, Netherlands

Ronald Albert John Van Doorn

This inventor holds 1 USPTO granted patent. Top assignee: Asml Netherlands B.v.. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ronald Albert John Van Doorn. Retrieved from https://idiyas.com/inventor/ronald-albert-john-van-doorn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2013

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovation Spotlight: Ronald Albert John Van Doorn

Introduction:

Ronald Albert John Van Doorn, an innovative inventor based in Eindhoven, NL, has made significant contributions to the field of lithographic apparatus with his patented method for measuring and acquiring height data related to a substrate surface.

Latest Patents:

Van Doorn's notable patent is for a method and lithographic apparatus designed for precise height data acquisition on substrate surfaces. This invention showcases his expertise in developing advanced technological solutions for improving lithographic processes.

Career Highlights:

Currently affiliated with ASML Netherlands B.V., Ronald Albert John Van Doorn brings his expertise to a leading technology company in the Netherlands. His work at ASML showcases his commitment to driving technological advancements in the field of lithography.

Collaborations:

Van Doorn has collaborated closely with esteemed colleagues such as Frank Staals and Paulus Antonius Andreas Teunissen. Their combined efforts have led to innovative solutions and advancements in the realm of lithographic technology.

Conclusion:

Ronald Albert John Van Doorn's dedication to innovation and his notable contributions to the field of lithographic apparatus exemplify his passion for pushing the boundaries of technological possibilities. His inventive spirit and collaborative efforts continue to inspire advancements in the realm of patent technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…