Soest, Germany

Roman Lennart Tschirbs

This inventor holds 7 USPTO granted patents and 3 published patent applications and 3 EPO patents. Top assignees: Infineon Technologies Ag, Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg. Active years: 2004-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Roman Lennart Tschirbs. Retrieved from https://idiyas.com/inventor/roman-lennart-tschirbs

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 7 

% Patents Active = 71.4

 

Average Co-Inventor Count = 1.9

ph-index = 4

Forward Citations = 33(Granted Patents)


Company Filing History:


Years Active: 2004-2015

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7 patents (USPTO):Explore Patents

Title: Roman Lennart Tschirbs: Innovative Power Semiconductor Module Inventor

Introduction:

In the world of power semiconductor modules, Roman Lennart Tschirbs has made a significant impact with his creative and groundbreaking inventions. Hailing from Soest, Germany, Tschirbs has an impressive portfolio of patents, highlighting his expertise in the field. This article will delve into Tschirbs' latest patents, career highlights, collaborations, and his notable contributions to the industry.

Latest Patents:

Tschirbs continually pushes the boundaries of power semiconductor modules with his latest patents. Two of his recent inventions include:

1. Power Semiconductor Module with Pressed Baseplate: This patent showcases a power semiconductor module featuring a baseplate with a depression formed in it. The depression extends from the top side of the baseplate, and its thickness is locally reduced in that region. Additionally, a circuit carrier is positioned above the depression. This unique design improves the performance and efficiency of power semiconductor modules.

2. Power Semiconductor Module with Segmented Baseplate: Tschirbs' novel invention presents a power semiconductor module with a segmented baseplate. This design incorporates multiple baseplate segments and respective circuit carriers, each arranged on exactly one baseplate segment. This configuration provides enhanced versatility and improved thermal management capabilities.

Career Highlights:

Tschirbs has made a name for himself within the industry by working with renowned companies such as Infineon Technologies AG and Eupec Europaeische Gesellschaft Fur Leistungshalbleiter GmbH. His invaluable contributions have greatly influenced the development of power semiconductor modules.

Collaborations:

Throughout his career, Tschirbs has collaborated with various experts in the field. Some notable colleagues include Reinhold Bayerer and Mark Nils Münzer. These collaborations have fostered an environment of knowledge sharing, leading to the creation of innovative technologies and patents.

Conclusion:

Roman Lennart Tschirbs stands as an inventive force in the realm of power semiconductor modules. His commitment to pushing boundaries and finding innovative solutions has resulted in numerous patents that improve performance and efficiency in power electronics. As he continues to contribute his expertise, the industry eagerly awaits Tschirbs' future inventions and the impact they will undoubtedly have on the field.

(Note: All the patent details provided are fictitious and are solely intended for illustrative purposes.)

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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