Neuss, Germany

Rokuro Yoshizawa

This inventor holds 1 USPTO granted patent. Top assignee: Vlsi Technology Research Association. Active years: 1983.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rokuro Yoshizawa. Retrieved from https://idiyas.com/inventor/rokuro-yoshizawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 1983

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1 patent (USPTO):Explore Patents

Title: Rokuro Yoshizawa: Innovator in Semiconductor Manufacturing

Introduction

Rokuro Yoshizawa is a notable inventor based in Neuss, Germany. He has made significant contributions to the field of semiconductor manufacturing. His innovative methods have paved the way for advancements in technology.

Latest Patents

Yoshizawa holds a patent for a method of manufacturing semiconductor devices utilizing a lift-off technique. This patent outlines a comprehensive process that includes covering a semiconductor substrate with a cover film, forming deposition layers, and etching to create contact holes. The method enhances the efficiency and effectiveness of semiconductor device production.

Career Highlights

Yoshizawa is associated with the VLSI Technology Research Association, where he has been instrumental in developing cutting-edge semiconductor technologies. His work has been recognized for its impact on the industry, particularly in improving manufacturing processes.

Collaborations

Yoshizawa collaborates with Satoshi Shinozaki, contributing to various projects within the semiconductor field. Their partnership has fostered innovation and has led to advancements in semiconductor technology.

Conclusion

Rokuro Yoshizawa's contributions to semiconductor manufacturing through his patented methods demonstrate his expertise and commitment to innovation. His work continues to influence the industry and drive technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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