Rohith Soman

Title: Rohith Soman: Innovator in High Mobility Electron Transistors

Introduction

Rohith Soman is a prominent inventor based in Bengaluru, India. He has made significant contributions to the field of electronics, particularly in the development of high mobility electron transistors. With a total of 2 patents to his name, Soman is recognized for his innovative approaches to semiconductor technology.

Latest Patents

Rohith Soman's latest patents include groundbreaking advancements in transistor technology. One of his notable inventions is a stacked buffer in transistors, which provides a High Mobility Electron Transistor (HEMT) comprising a substrate, a nucleation layer, a channel layer, and a buffer layer formed between the nucleation layer and the channel layer. The buffer layer consists of a vertical stack of p-n junctions, enhancing the performance of the transistor. Another significant patent is for a High Electron Mobility Transistor (HEMT) with a reduced surface field (RESURF) junction. This design features a source electrode, a drain electrode, and a gate electrode, with a buried channel layer formed in the RESURF junction upon application of a positive voltage at the gate electrode.

Career Highlights

Rohith Soman is affiliated with the Indian Institute of Science, where he conducts research and development in semiconductor technologies. His work has been instrumental in advancing the capabilities of high mobility electron transistors, which are crucial for various electronic applications.

Collaborations

Soman has collaborated with esteemed colleagues such as Srinivasan Raghavan and Navakanta Bhat. These collaborations have fostered a productive research environment, leading to innovative solutions in the field of electronics.

Conclusion

Rohith Soman is a distinguished inventor whose work in high mobility electron transistors has made a significant impact on the electronics industry. His patents reflect a commitment to innovation and excellence in semiconductor technology.