The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Dec. 05, 2019
Applicant:
Indian Institute of Science, Bangalore, IN;
Inventors:
Assignee:
Indian Institute of Science, Bangalore Karnataka, IN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/0638 (2013.01);
Abstract
The present subject matter provides a High Mobility Electron Transistor (HEMT) comprising: a substrate, a nucleation layer provided on the substrate, a channel layer, and a buffer layer formed between the nucleation layer and the channel layer. The buffer layer comprises a vertical stack of p-n junctions. Each p-n junction of the vertical stack of p-n junctions comprises an n-type layer provided on a p-type layer. The n-type layer and the p-type layer are parallel to the substrate.