Asbury, NJ, United States of America

Roger E Stricker

This inventor holds 1 USPTO granted patent. Top assignee: Rca Inc.. Active years: 1984.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Roger E Stricker. Retrieved from https://idiyas.com/inventor/roger-e-stricker

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 1984

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1 patent (USPTO):Explore Patents

Title: The Innovations of Roger E. Stricker

Introduction

Roger E. Stricker is a notable inventor based in Asbury, NJ (US). He has made significant contributions to the field of semiconductor technology. His innovative approach has led to advancements that improve the conductivity of semiconductor devices.

Latest Patents

Roger E. Stricker holds 1 patent for a method of making a semiconductor device to enhance conductivity. This patent describes a process where a film of non-single crystalline silicon, such as polycrystalline or amorphous silicon, is deposited on a substrate. The film is then doped, particularly by ion implantation, to make it conductive. The key innovation involves pre-annealing the film at a temperature of 1000°C to 1200°C in an inert ambient before doping, which significantly increases the film's conductivity.

Career Highlights

Stricker has had a distinguished career, working at RCA Inc., where he has been able to apply his expertise in semiconductor technology. His work has contributed to the development of more efficient electronic devices.

Collaborations

Throughout his career, Roger E. Stricker has collaborated with notable colleagues, including George L. Schnable and Bansang W. Lee. These collaborations have furthered advancements in semiconductor research and development.

Conclusion

Roger E. Stricker's contributions to semiconductor technology exemplify the impact of innovative thinking in the field. His patent for improving conductivity in semiconductor devices showcases his commitment to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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