Rca Inc.

Roger E Stricker

George L Schnable

Chung P Wu

Bansang W Lee

In making a semiconductor device wherein a film of a non-single crystalline silicon, such as polycrystalline or amorphous silicon, is deposited on a substrate and then doped, particularly by ion implantation, to make the film conductive, the conductivity of the film is increased by pre-annealing the film at a temperature of 1000.degree. C. to 1200.degree. C. in an inert ambient before doping the film.

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Asbury, NJ, United States of America

Roger E Stricker