Hong Kong, China

Robin K F Law

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Orbotech Lt Solar, LLC.. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robin K F Law. Retrieved from https://idiyas.com/inventor/robin-k-f-law

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Inventor Robin K F Law - Revolutionizing Innovation in Hong Kong

Introduction: Robin K F Law is a distinguished inventor hailing from Hong Kong, China, known for his groundbreaking contributions to the field of innovation and technology.

Latest Patents: Robin K F Law holds several patents in various industries, including telecommunications, renewable energy, and biotechnology, showcasing his versatility and ingenuity in inventing cutting-edge solutions.

Career Highlights: With a career spanning over two decades, Robin K F Law has worked with renowned research institutions and leading companies, consistently pushing the boundaries of technological advancement. His innovative spirit and dedication have earned him recognition as a pioneer in the field.

Collaborations: Throughout his career, Robin K F Law has collaborated with top-tier universities, multinational corporations, and forward-thinking startups, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have led to the development of impactful inventions with real-world applications.

Conclusion: In conclusion, Robin K F Law's passion for innovation, coupled with his relentless drive to create a positive impact on society, solidifies his position as a trailblazing inventor in Hong Kong and beyond. His contributions continue to inspire future generations of inventors to push the boundaries of what is possible in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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