Robin Jung

Title: Robin Jung and His Transistor Innovation.

Introduction

Robin Jung is an inventor associated with Toulouse, France, and STMicroelectronics France. His work includes a patent for a field-effect transistor with an interdigitated structure.

Latest Patents

Jung’s listed patent is titled “Transistor with Interdigit Electrodes, Comprising a Gate Terminal Connected by a Plurality of Vertical Vias to the Gate Electrodes.” The invention describes a field-effect transistor whose gate electrodes connect to the gate terminal through vertical conductive vias. The gate terminal is positioned vertically in line with all or part of the transistor’s elementary cells. Jung is credited with 1 patent.

Career Highlights

The available information associates Jung with STMicroelectronics France and identifies his patented work in transistor design. The invention focuses on the arrangement and connection of gate electrodes in an interdigitated transistor structure.

Collaborations

Jung’s listed company affiliation is STMicroelectronics France. The provided information does not identify specific co-inventors or other collaborators for the patent.

Conclusion

Robin Jung’s patent describes a field-effect transistor design that uses vertical vias to connect its gate electrodes to the gate terminal, reflecting his documented contribution to semiconductor innovation.