The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jun. 15, 2021
Applicant:
Stmicroelectronics France, Montrouge, FR;
Inventor:
Robin Jung, Toulouse, FR;
Assignee:
STMicroelectronics France, Montrouge, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H10W 20/20 (2026.01); H10W 20/40 (2026.01); H10W 20/42 (2026.01); H10W 70/60 (2026.01); H10W 72/30 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10D 84/83 (2025.01); H10W 20/20 (2026.01); H10W 20/40 (2026.01); H10W 20/42 (2026.01); H10W 70/60 (2026.01); H10W 72/352 (2026.01); H10W 90/734 (2026.01);
Abstract
The invention concerns a field-effect transistor () having an interdigited structure and comprising: The field-effect transistor () only comprises vertical conductive vias to connect the gate electrodes to the gate terminal, and the gate terminal () is arranged vertically in line with all or part of the elementary cells ().
Jung, Robin. (2026). Transistor with interdigit electrodes, comprising a gate terminal connected by a plurality of vertical vias to the gate electrodes (U.S. Patent No. 12772548). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772548
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile