Helsinki, Finland

Robin Enholm

This inventor holds 1 USPTO granted patent. Top assignee: Beneq Oy. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robin Enholm. Retrieved from https://idiyas.com/inventor/robin-enholm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Robin Enholm: Innovator in Substrate Processing Technology

Introduction

Robin Enholm is a notable inventor based in Helsinki, Finland. He has made significant contributions to the field of substrate processing technology. His innovative work has led to the development of a unique apparatus designed to enhance surface reactions on substrates.

Latest Patents

Enholm holds a patent for an "Apparatus for processing surface of substrate and nozzle head." This invention relates to an apparatus and nozzle head that processes the surface of a substrate. The apparatus features a substrate support mechanism that holds the substrate on a support plane within a process zone. It also includes a nozzle head that subjects the substrate's surface to successive reactions involving at least two precursors. The nozzle head support mechanism maintains the nozzle head at a predetermined distance from the substrate support plane, ensuring precision in the processing.

Career Highlights

Robin Enholm is associated with Beneq Oy, a company known for its advancements in thin film technology. His work at Beneq Oy has allowed him to apply his innovative ideas in a practical setting, contributing to the company's reputation in the industry.

Collaborations

Throughout his career, Enholm has collaborated with esteemed colleagues such as Leif Keto and Pekka T Soininen. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

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Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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