Robin Chao

Title: Robin Chao: Innovator in High Voltage Transistor Technology

Introduction

Robin Chao is a prominent inventor based in Portland, OR (US). He has made significant contributions to the field of integrated circuitry, particularly in high voltage transistor technology. His innovative work has led to the development of a unique patent that enhances the performance of transistor stacks.

Latest Patents

Robin Chao holds a patent titled "Dipole threshold voltage tuning for high voltage transistor stacks." This patent focuses on integrated circuitry that comprises high voltage (HV) and low voltage (LV) ribbon or wire (RoW) transistor stack structures. In this invention, a gate electrode of the HV and LV transistor stack structures may include the same work function metal. Additionally, a metal oxide may be deposited around one or more channels of the HV transistor stack, thereby altering the dipole properties of the gate insulator stack from those of the LV transistor stack structure. He has 1 patent to his name.

Career Highlights

Robin Chao is currently employed at Intel Corporation, where he continues to push the boundaries of technology in the semiconductor industry. His work at Intel has allowed him to collaborate with some of the brightest minds in the field, contributing to advancements in high voltage transistor technology.

Collaborations

One of his notable coworkers is Bishwajeet Guha, with whom he has likely shared insights and expertise in their respective areas of research.

Conclusion

Robin Chao's innovative contributions to high voltage transistor technology exemplify the spirit of invention and collaboration in the tech industry. His patent work at Intel Corporation showcases his commitment to advancing integrated circuitry solutions.