Robert Shih

Title: The Innovations of Robert Shih

Introduction

Robert Shih is an accomplished inventor based in Cerritos, CA (US). He holds 2 patents that contribute to advancements in light-emitting diode technology. His work focuses on gallium nitride (GaN) structures, which are essential for modern LED applications.

Latest Patents

One of his latest patents is titled "Window for Gallium Nitride Light Emitting Diode." This patent describes a window structure that includes a Mg+ doped p window layer of a GaN compound, a thin, semi-transparent metal contact layer, and an amorphous current spreading layer. The contact layer is formed of NiO/Au, while the current spreading layer is made of Indium Tin Oxide. The p electrode of the diode features a titanium adhesion layer that creates an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer. Another patent, "Method of Forming a Window for a Gallium Nitride Light Emitting Diode," shares similar innovations and technical details, further showcasing his expertise in this field.

Career Highlights

Robert Shih has worked with Dalian Lumei Optoelectronics Corporation, where he applied his knowledge and skills in the development of LED technologies. His contributions have been significant in enhancing the performance and efficiency of light-emitting diodes.

Collaborations

Throughout his career, Robert has collaborated with notable professionals, including Bingwen Liang and John Chen. These partnerships have allowed him to expand his knowledge and influence in the field of optoelectronics.

Conclusion

Robert Shih's innovative work in gallium nitride light-emitting diodes has made a significant impact on the industry. His patents reflect a deep understanding of semiconductor technology and its applications. His contributions continue to shape the future of LED technology.