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Dalian Lumei Optoelectronics Corporation

Lumei Optoelectronics Corporation

Dalian Luming Science and Technology Group Co. Ltd.

Robert Shih

Bingwen Liang

John Youngfu Chen

John Chen

A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiO/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.

Window for gallium nitride light emitting diode

A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg&plus; doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiO /Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg&plus; doped window layer.

Method of forming a window for a gallium nitride light emitting diode

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Cerritos, CA, United States of America

Robert Shih