Robert H Dawson

Title: The Innovations of Robert H. Dawson

Introduction

Robert H. Dawson is a notable inventor based in Princeton, NJ (US). He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work has focused on improving the reliability and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is a semiconductor device passivated with phosphosilicate glass over silicon. This innovative device includes a layer of silicon nitride (Si₃N₄) beneath a phosphosilicate glass (PSG) layer. The design features a silicon nitride impervious layer that prevents the oxidation of underlying, exposed silicon regions during a 'flow' step and any 'reflow' step. This allows the PSG layer to be processed in an atmosphere containing steam, reducing the phosphorus content to less than about 7% by weight. This reduction enhances the reliability of the semiconductor device. Another significant patent is the low temperature elevated pressure glass flow/re-flow process. This method reduces the time and temperature required for flowing or re-flowing a glass layer on a semiconductor device by conducting the process steps at an elevated pressure.

Career Highlights

Robert H. Dawson has had a distinguished career at RCA Inc., where he has been instrumental in advancing semiconductor technologies. His innovative approaches have led to improvements in manufacturing processes and device reliability.

Collaborations

Throughout his career, Dawson has collaborated with notable colleagues, including James E. Carnes and George L. Schnable. These partnerships have contributed to the development of groundbreaking technologies in the semiconductor field.

Conclusion

Robert H. Dawson's contributions to semiconductor technology through his patents and collaborations have significantly impacted the industry. His work continues to influence advancements in the field, showcasing the importance of innovation in technology.