Rca Inc.

Robert H Dawson

James E Carnes

George L Schnable

Walter F Kosonocky

Frank J Marlowe

Martin A Blumenfeld

Dennis P Biondi

Henry William Kaiser

Chung W Leung

Robert Thomas Fedorka

The semiconductor device includes a layer of silicon nitride (Si.sub.3 N.sub.4) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying, exposed silicon regions during a 'flow' step and any 'reflow' step. Accordingly, the flow of the PSG layer can be conducted in an atmosphere containing steam, which means that the PSG layer can contain less than about 7% phosphorus by weight. The reduction of the phosphorus content of the PSG layer provides increased reliability for the semiconductor device. The method of manufacturing such a device is also disclosed.

Semiconductor device passivated with phosphosilicate glass over silicon

A method of reducing the time and temperature for either flowing or re-flowing a glass layer on a semiconductor device is described. The method involves conducting the flow or re-flow process steps at an elevated pressure which reduces both the time and the temperature required to achieve proper flow and re-flow characteristics.

Low temperature elevated pressure glass flow/re-flow process

Passivating composite for a semiconductor device comprising a silicon

A comb filter comprising a charge transfer device (CTD) structure for separating frequency interleaved luminance and chrominance components of a composite color television signal directly within the CTD structure. The CTD structure has first and second pairs of input sections of substantially identical geometry, one input section of the second pair being preceded by a signal inverter. Signal charge as applied to the first and second input pairs are delayed such that signal charge from the first input pair exhibits a 1H delay relative to signal charge from the second input pair, when the signal charge from the respective input pairs are combined with each other. A first charge summing well combines mutually in-phase signal charge at multiples of the line scanning frequency from the first and second inputs to provide a combed luminance signal charge component, while a second well combines mutually inverted or out-of-phase signal charge at these frequencies from the first and second inputs to provide a combed chrominance signal charge component.

Comb filter employing a charge transfer device with plural mutually

A digital memory may be addressed with an analog signal utilizing a circuit comprising a digital to analog converter. A comparator compares the output of the digital to analog converter to the analog address signal. The output of the comparator is coupled to means for incrementing and decrementing a digital number in response to that output. The digital number incrementing and decrementing means has an output which is coupled to the addressing input of the digital memory. Switch means alternately connects the input of the digital to analog converter to either the output of the random access memory or the output of the means for changing the digital number.

Digital memory addressing system

An arrangement of charge transfer devices comprising a main signal transfer path defined by first and second sets of charge transfer electrodes, and an auxiliary path independent of the main path including a predetermined number of electrodes. Capacitances are respectively associated with the electrodes forming the first and second sets of electrodes of the main path, and with the electrodes of the auxiliary path. The electrodes of the auxiliary path are connected to the one of the sets of electrodes of the main channel to establish a desired relationship (e.g., balance) between the capacitances of the first and second sets of electrodes.

Balanced capacitance charge transfer device

The input signal to a CCD register is sampled many times during one period of the multiple phase voltages employed to drive the CCD. The samples are translated to small charge packets which are added to one another during the one period to produce a sum charge packet which subsequently is propagated down the register. The higher frequency components, including noise, which are present in the input signal largely cancel during the charge addition process.

Charge transfer circuits exhibiting low pass filter characteristics

A voltage variable tuning capacitor structure is disclosed. A pair of metal-insulator-semiconductor (MIS) capacitors are fabricated in a body of semiconductor material in back-to-back configuration. The back-to-back configuration reduces the effect of intermodulation distortion. The device has a relatively high quality factor, Q, because of a relatively low transverse resistance which is provided by a doped region between the pair of capacitors. The device may be used for the electronic tuning of integrated RF receivers for television, VHF, UHF, AM or FM tuners.

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Princeton, NJ, United States of America

Robert H Dawson