Pennsauken, NJ, United States of America

Robert G Davies

This inventor holds 2 USPTO granted patents. Top assignees: Lockhead Martin Corp., Lockheed Martin Corporation. Active years: 2005-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robert G Davies. Retrieved from https://idiyas.com/inventor/robert-g-davies-w0kwq7t8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2005-2006

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2 patents (USPTO):Explore Patents

Title: The Innovations of Robert G Davies

Introduction

Robert G Davies is an accomplished inventor based in Pennsauken, NJ (US). He has made significant contributions to the field of technology, particularly in high power applications and dielectric materials. With a total of 2 patents to his name, Davies has demonstrated his expertise and innovative spirit.

Latest Patents

One of his latest patents is titled "Helix radiating elements for high power applications." This invention discloses a helix radiating element that includes a support made of a dielectric material, specifically PEEK (Polyetheretherketone). The base of the element is coupled to the support and is constructed from boron nitride. The helix wire is designed to be wrapped around the support and bonded to the base, which is then connected to a ground plane. The use of boron nitride filled adhesive ensures effective bonding and heat transfer from the helix wire to the ground plane.

Another notable patent by Davies is "Polymide-to-substrate adhesion promotion in HDI." This patent describes methods for adhering polyimide dielectric materials to various substrate materials, including copper, titanium, and aluminum. The process involves applying an adhesion promoter to a clean substrate surface, curing it, and then applying SPIE varnish. The polyimide dielectric material is subsequently laminated to the adhesion promoter, ensuring strong adhesion and performance.

Career Highlights

Throughout his career, Robert G Davies has worked with prominent companies such as Lockheed Martin Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking projects in the field of technology.

Collaborations

Davies has collaborated with notable individuals in his field, including Donald Franklin Foust and William Francis Nealon. These collaborations have further enriched his work and expanded his innovative capabilities.

Conclusion

Robert G Davies is a distinguished inventor whose contributions to technology are marked by his innovative patents and collaborations. His work continues to influence advancements in high power applications and dielectric materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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