Colchester, VT, United States of America

Robert E Fields

This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robert E Fields. Retrieved from https://idiyas.com/inventor/robert-e-fields-5fd9zinl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 29(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: The Innovations of Robert E. Fields

Introduction

Robert E. Fields is a notable inventor based in Colchester, Vermont. He has made significant contributions to the field of ion implantation technology. His work primarily focuses on enhancing the efficiency and effectiveness of ion sources.

Latest Patents

Robert E. Fields holds a patent for a method to reduce downtime while implanting GeF4. This innovative approach extends the operating lifetime of a hot cathode discharge ion source. The method involves introducing nitrogen into an ion implantation apparatus after the introduction of an ion implantation gas, such as GeF, is stopped. Notably, nitrogen can also be introduced along with GeF during implantation, further optimizing the process.

Career Highlights

Fields is associated with International Business Machines Corporation, commonly known as IBM. His role at IBM has allowed him to work on cutting-edge technologies and contribute to advancements in the semiconductor industry. His expertise in ion implantation has positioned him as a valuable asset within the company.

Collaborations

Robert E. Fields has collaborated with esteemed colleagues, including Gary Michael Prescott and Richard S. Ray. Their combined efforts have led to significant advancements in their respective fields.

Conclusion

Robert E. Fields exemplifies innovation in the realm of ion implantation technology. His contributions, particularly his patented method, have the potential to enhance the efficiency of ion sources significantly. His work continues to influence the industry and inspire future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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