Garden City, NY, United States of America

Robert A Ruehrwein


Average Co-Inventor Count = 1.0

ph-index = 3

Forward Citations = 83(Granted Patents)


Location History:

  • Garden City, NY (US) (1976 - 1977)
  • Tenafly, NJ (US) (1977)

Company Filing History:


Years Active: 1976-1977

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3 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Inventor Robert A Ruehrwein

Introduction: Robert A Ruehrwein, an accomplished inventor based in Garden City, NY, has made significant strides in the field of material science. With a remarkable portfolio that includes three patents, his work primarily focuses on the advancement of III-V compound epitaxial crystals. His innovative methods have the potential to impact various technological applications.

Latest Patents: Robert's latest patents exemplify his ingenuity and expertise in the field. The first patent, titled "Process for III-V compound epitaxial crystals utilizing inert carrier gas," describes a novel method for forming and epitaxially depositing III-V compound crystals. This process involves interacting two gaseous mixtures in the absence of oxidizing gas and hydrogen carrier gas. Specifically, one mixture is a combination of an inert carrier gas and a hydrogen halide with a Group III element, while the second involves an inert carrier gas with a Group V element or a volatile Group V compound.

His second patent, "Process for production of III-V compound crystals," outlines another innovative technique for forming and depositing these crystals. This method also interacts two gaseous mixtures but focuses on contacting a gaseous trihalide of a Group III element with an inert carrier gas before introducing it to the Group III element.

Career Highlights: Throughout his career, Robert A Ruehrwein has demonstrated a commitment to advancing technology in the semiconductor industry. His work reflects a deep understanding of complex processes involved in crystal growth and material deposition.

Collaborations: Robert has collaborated with significant industry entities such as Semimetals, Inc., where he has contributed his expertise in the development of advanced materials. His experience with such companies highlights his role as a driving force in the innovation of semiconductor technologies.

Conclusion: Robert A Ruehrwein's contributions to the field of material science and his patents on III-V compound epitaxial crystals showcase his innovative spirit and dedication to advancing technology. As industries continue to evolve, inventors like Robert will play a crucial role in shaping the future of semiconductor applications.

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