The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1976
Filed:
Dec. 13, 1973
Applicant:
Inventor:
Robert A Ruehrwein, Garden City, NY (US);
Assignee:
Semimetals, Inc., Westbury, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148175 ; 148174 ; 148176 ;
Abstract
A method of forming and epitaxially depositing III-V compound crystals which comprises interacting two gaseous mixtures in the absence of oxidizing gas and hydrogen carrier gas, one mixture being formed by contacting a stream of an inert carrier gas with a gaseous trihalide of a Group III element and thereafter contacting that mixture with the same Group III element, the second mixture being formed by contacting a stream of an inert carrier gas with a Group V element or a volatile Group V compound.