Rober J Miller

Title: Rober J Miller: Innovator in Semiconductor Technology

Introduction

Rober J Miller is a notable inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced devices.

Latest Patents

Rober J Miller holds a patent for "Polycrystalline SiGe junctions for advanced devices." This patent describes a structure and method of fabrication for MOSFET devices featuring a polycrystalline SiGe junction. The innovative process involves selectively growing Ge on Si while simultaneously growing Si on Ge. By utilizing alternating depositions of Ge and Si layers, the SiGe junction is formed. The layers are doped, allowing the dopants to outdiffuse into the device body. Additionally, a thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions. He has 1 patent to his name.

Career Highlights

Rober J Miller is currently employed at International Business Machines Corporation, commonly known as IBM. His work at IBM has positioned him as a key player in the advancement of semiconductor technologies.

Collaborations

Some of his coworkers include Kevin K Chan and Erin C Jones, who contribute to the innovative environment at IBM.

Conclusion

Rober J Miller's work in semiconductor technology, particularly through his patent on polycrystalline SiGe junctions, showcases his innovative spirit and dedication to advancing the field. His contributions continue to influence the development of advanced electronic devices.