The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
May. 21, 2004
Kevin Kok Chan, Staten Island, NY (US);
Rober J. Miller, Yorktown Heights, NY (US);
Erin C. Jones, Corvallis, OR (US);
Atul Ajmera, Wappinger, NY (US);
Kevin Kok Chan, Staten Island, NY (US);
Rober J. Miller, Yorktown Heights, NY (US);
Erin C. Jones, Corvallis, OR (US);
Atul Ajmera, Wappinger, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.