Location History:
- Ibaragi, JP (2003)
- Nara, JP (2009 - 2010)
Company Filing History:
2 out of 16,453 
1 out of 27,375 
1 out of 30 
Years Active: 2003-2010
Title: The Innovations of Riichiro Mitsuhashi
Introduction
Riichiro Mitsuhashi is a notable inventor based in Nara, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Mitsuhashi's latest patents include an innovative design for an insulating buffer film and a high dielectric constant semiconductor device. This semiconductor device features an n-transistor with a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal. The structure is designed to optimize the performance of the semiconductor region. Additionally, the p-transistor in the device includes a second gate insulating film made of the same high-dielectric-constant material and a second gate electrode, also fully silicided with the metal. The concentration of metal in the gate electrodes varies based on the work function relative to the Fermi level of silicon, which is crucial for the device's functionality.
Career Highlights
Throughout his career, Mitsuhashi has worked with prominent companies such as Panasonic Corporation and Matsushita Electric Industrial Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.
Collaborations
Mitsuhashi has collaborated with notable coworkers, including Shigenori Hayashi and Masafumi Kubota. Their combined expertise has contributed to the advancement of semiconductor technologies.
Conclusion
Riichiro Mitsuhashi's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the development of advanced semiconductor devices.