The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6667246 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 23, 2003

Filed:

Dec. 04, 2002
Applicant:
Inventors:

Riichiro Mitsuhashi, Ibaragi, JP;

Masafumi Kubota, Osaka, JP;

Shigenori Hayashi, Nara, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1461 ;
Abstract

A substrate with a metal oxide film deposited thereon is annealed, and then the surface of the metal oxide film is exposed to a plasma, after which the metal oxide film is removed by wet-etching.


Find Patent Forward Citations

Mitsuhashi, Riichiro. (2003). Wet-etching method and method for manufacturing semiconductor device (U.S. Patent No. 6667246). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6667246

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