Williston, VT, United States of America

Richard S Ray

This inventor holds 2 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Richard S Ray. Retrieved from https://idiyas.com/inventor/richard-s-ray-nti5b6co

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 2

Forward Citations = 45(Granted Patents)


Company Filing History:


Years Active: 2003

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2 patents (USPTO):Explore Patents

Title: Innovations of Richard S Ray

Introduction

Richard S Ray is a notable inventor based in Williston, Vermont, known for his contributions to the field of ion implantation technology. He holds 2 patents that showcase his innovative approach to enhancing semiconductor manufacturing processes. His work primarily focuses on improving the efficiency and effectiveness of ion implanters.

Latest Patents

One of Richard's latest patents is the "Ion implanter in-situ mass spectrometer." This apparatus is designed for the in-situ detection of ions in a beam of an ion implanter device. It includes a mass spectrometer with inner and outer walls, along with a system for generating and directing an ion implant beam through the device. The mass spectrometer generates a magnetic field to direct desirable ions through an aperture for implantation into semiconductor wafers, while undesirable ions are deflected to collide with the walls. The device features detectors on the walls to identify these undesirable ions, allowing for real-time monitoring and corrective actions during wafer processing.

Another significant patent is the "Method to reduce downtime while implanting GeF4." This innovation extends the operating lifetime of a hot cathode discharge ion source by introducing nitrogen into the ion implantation apparatus after halting the introduction of an ion implantation gas, such as GeF4. This method can also involve introducing nitrogen alongside GeF4 during implantation, thereby enhancing the overall efficiency of the process.

Career Highlights

Richard S Ray is associated with the International Business Machines Corporation (IBM), where he has made significant contributions to the field of semiconductor technology. His work has been instrumental in advancing ion implantation techniques, which are crucial for the production of high-performance semiconductor devices.

Collaborations

Richard has collaborated with notable colleagues, including Nicholas Mone, Jr. and Donald Walter Rakowski. Their combined expertise has contributed to the development of innovative solutions in the semiconductor industry.

Conclusion

Richard S Ray's contributions to ion implantation technology reflect his commitment to innovation and excellence in the field. His patents demonstrate a deep understanding of the complexities involved in semiconductor manufacturing, paving the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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