San Jose, CA, United States of America

Richard Matthew Fruin

USPTO Granted Patents = 3 

Average Co-Inventor Count = 3.3

ph-index = 2

Forward Citations = 77(Granted Patents)


Company Filing History:


Years Active: 2006-2013

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3 patents (USPTO):Explore Patents

Title: Richard Matthew Fruin: Innovator in Memory Device Technology

Introduction

Richard Matthew Fruin is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of memory devices, holding a total of 3 patents. His work focuses on enhancing the functionality and compatibility of memory technologies.

Latest Patents

Fruin's latest patents include innovative methods and memory devices that operate in both read-only and read/write modes. One of his key inventions is a method that allows a memory device to power up in a read-only mode, which can then be switched to a read/write mode. This technology is particularly useful for one-time programmable (OTP) and write-once read-many (WORM) memory devices. These embodiments ensure compatibility between OTP memory arrays and host devices that utilize file systems, such as the DOS FAT file system. Additionally, they provide mechanisms to prevent accidental or deliberate overwrites, changes, or deletions of existing data in WORM memory devices.

Career Highlights

Throughout his career, Richard has worked with prominent companies in the technology sector, including SanDisk Technologies Inc. and Matrix Semiconductor, Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Richard has collaborated with talented individuals in the field, including Christopher S. Moore and Samuel Yu. These partnerships have contributed to the advancement of his projects and the successful development of his patents.

Conclusion

Richard Matthew Fruin's contributions to memory device technology demonstrate his innovative spirit and commitment to enhancing data storage solutions. His patents reflect a deep understanding of the challenges in memory technology and offer practical solutions for the future.

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