This inventor holds 3 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1990-1999.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1990-1999
Title: Richard J Matyi: Innovator in Semiconductor Technology
Introduction
Richard J Matyi is a notable inventor based in Richardson, TX (US), recognized for his contributions to semiconductor technology. He holds a total of three patents, showcasing his expertise and innovative spirit in the field.
Latest Patents
Among his latest patents is the invention titled "Epitaxial layer on a heterointerface." This patent details a method for heteroepitaxy of lattice-mismatched semiconductor materials, specifically GaAs (110) on silicon (102). The process involves the formation of a defect annihilating grid on the silicon prior to the epitaxy of the GaAs. Another significant patent is "Method of forming an epitaxial layer on a heterointerface," which describes a similar approach to achieving successful heteroepitaxy.
Career Highlights
Richard J Matyi is currently employed at Texas Instruments Corporation, where he continues to push the boundaries of semiconductor research and development. His work has significantly impacted the industry, particularly in the area of lattice-mismatched materials.
Collaborations
One of his notable coworkers is Hisashi Shichijo, with whom he has likely collaborated on various projects within the semiconductor domain.
Conclusion
Richard J Matyi's innovative work in semiconductor technology, particularly in heteroepitaxy, has established him as a key figure in the field. His contributions continue to influence advancements in semiconductor materials and applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile