The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 1990
Filed:
Sep. 08, 1987
Applicant:
Inventors:
Richard J Matyi, Richardson, TX (US);
Hisashi Shichijo, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 90 ; 148D / ; 148D / ; 148D / ; 148D / ; 156603 ; 156613 ; 437 99 ; 437132 ; 437226 ; 437973 ;
Abstract
Preferred embodiments include growth of GaAs on insulator-masked silicon; the GaAs is single crystal over the silicon but polycrystalline over the insulator. A post=growth anneal extends the single crystal region over the insulator for distances of 2-4 .mu.m.
Matyi, Richard. (1990). Heteroepitaxial selective-area growth through insulator windows (U.S. Patent No. 4914053). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4914053
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile