Pfaeffikon, Switzerland

Reto Pfeiffer

This inventor holds 1 USPTO granted patent. Top assignee: Basf Se Corporation. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Reto Pfeiffer. Retrieved from https://idiyas.com/inventor/reto-pfeiffer-vptnjw45

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Reto Pfeiffer: Innovator in Electronic Device Fabrication

Introduction

Reto Pfeiffer is a notable inventor based in Pfaeffikon, Switzerland. He has made significant contributions to the field of electronic device fabrication, particularly through his innovative methods for forming patterns on substrates.

Latest Patents

Reto Pfeiffer holds a patent for a "Method for forming a pattern on a substrate and electronic device formed thereby." This invention involves a detailed process that includes depositing layers of opaque material and a photosensitive layer on a substrate. The method allows for the creation of source and drain electrodes for thin-film field effect transistors, showcasing its practical applications in modern electronics. He has 1 patent to his name.

Career Highlights

Pfeiffer is associated with BASF SE Corporation, where he applies his expertise in electronic device technology. His work has contributed to advancements in the efficiency and functionality of electronic components.

Collaborations

Throughout his career, Reto has collaborated with talented individuals such as Adrian Von Mühlenen and Lukas Bürgi. These partnerships have fostered innovation and have been instrumental in the development of his patented methods.

Conclusion

Reto Pfeiffer's contributions to electronic device fabrication highlight his role as an innovator in the field. His patented methods not only advance technology but also pave the way for future developments in electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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