Basf Se Corporation

Reto Pfeiffer

Harald Walter

Lukas Bürgi

Adrian Von Mühlenen

The invention relates to a method for forming a pattern on a substrate (S) with an upper surface and a lower surface which comprises the steps of depositing a first layer (E) of an opaque material on the upper surface of the substrate (S), depositing a photosensitive layer (R) such that part of the photosensitive layer (R) covers at least part of the first layer (E), exposing the photosensitive layer (R) to a light beam (L), the light beam (L) impinging on the lower surface of the substrate (S) under an oblique angle (&#x3a6;) of incidence, removing the exposed region of the photosensitive layer (R), depositing a second layer (E) of an opaque material such that part of the second layer (E) covers a remaining region of the photosensitive layer (R), and removing at least a part of the remaining region of the photosensitive layer (R). According to another aspect of the method of the invention anisotropic plasma etching is applied from above the upper surface of the substrate (S) after removal of the exposed region of the photosensitive layer (R) and thereafter the second layer (E) is deposited. The method of the invention can be applied for forming a source electrode and a drain electrode of a thin-film field effect transistor. The invention furthermore relates to an electronic device fabricated by such a method.

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Pfáffikon, Switzerland

Reto Pfeiffer