Nagoya-City, Japan

Ren Nakamura

This inventor holds 1 USPTO granted patent. Top assignee: Ngk Insulators, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ren Nakamura. Retrieved from https://idiyas.com/inventor/ren-nakamura-xl6weqom

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ren Nakamura: Innovator in Wafer Placement Technology

Introduction

Ren Nakamura is a prominent inventor based in Nagoya-City, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative designs and patents. His work focuses on enhancing the efficiency and effectiveness of wafer placement technology.

Latest Patents

Ren Nakamura holds a patent for a wafer placement table. This invention includes a ceramic plate with a wafer placement surface, an electrode, and an electrically conductive plate. The design features a ceramic plate penetrating part, an electrically insulating gas passage plug, and a gas introduction passage that enhances the functionality of the wafer placement table. This innovative design allows for improved gas flow and electrical continuity, which are crucial for semiconductor processing.

Career Highlights

Ren Nakamura is currently employed at NGK Insulators, Inc., where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise in materials science and engineering has positioned him as a key player in advancing wafer placement solutions.

Collaborations

Due to space constraints, the details of Ren Nakamura's collaborations will not be included.

Conclusion

Ren Nakamura's contributions to wafer placement technology exemplify his innovative spirit and dedication to advancing the semiconductor industry. His patent reflects a significant step forward in improving manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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