Florida, NY, United States of America

Raymond M Sicina


Average Co-Inventor Count = 3.6

ph-index = 1

Forward Citations = 14(Granted Patents)


Location History:

  • Florida, NY (US) (2002 - 2010)
  • Flordia, NY (US) (2010)

Company Filing History:


Years Active: 2002-2010

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3 patents (USPTO):

Title: The Innovations of Raymond M. Sicina

Introduction

Raymond M. Sicina is a notable inventor based in Florida, NY (US). He has made significant contributions to the field of technology, particularly in the area of silicon fabrication. With a total of 3 patents to his name, Sicina's work has had a lasting impact on the industry.

Latest Patents

One of his latest patents is focused on an ultra-thin silicon on insulator. In one embodiment, the invention describes a method and apparatus for fabricating this ultra-thin silicon on insulator. The method includes providing a silicon layer, saturating it with at least one reactant gas at a first temperature, which is low enough to substantially prevent any reactions involving the reactant gas. The process then involves raising the first temperature to a second temperature, which is approximately the dissociation temperature of the reactant gas. This innovative approach enhances the efficiency and effectiveness of silicon fabrication.

Career Highlights

Raymond M. Sicina is currently employed at International Business Machines Corporation, commonly known as IBM. His role at IBM has allowed him to work on cutting-edge technologies and contribute to various projects that push the boundaries of innovation.

Collaborations

Throughout his career, Sicina has collaborated with talented individuals such as Kevin K. Chan and Jakub Tadeusz Kedzierski. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Raymond M. Sicina's contributions to the field of silicon fabrication and his innovative patents highlight his importance as an inventor. His work continues to influence the technology landscape, showcasing the potential of advancements in silicon technology.

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