The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7816224 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 19, 2010

Filed:

Mar. 05, 2008
Applicants:

Kevin K. Chan, Staten Island, NY (US);

Jakub Kedzierski, Lexington, MA (US);

Raymond M. Sicina, Florida, NY (US);

Inventors:

Kevin K. Chan, Staten Island, NY (US);

Jakub Kedzierski, Lexington, MA (US);

Raymond M. Sicina, Florida, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one embodiment, the invention is a method for fabricating an ultra thin silicon on insulator. One embodiment of a method for fabricating an ultra thin silicon on insulator includes providing a silicon layer, saturating the silicon layer with at least one reactant gas at a first temperature, the first temperature being low enough to substantially prevent the occurrence of any reactions involving the reactant gas, and raising the first temperature to a second temperature, the second temperature being approximately a dissociation temperature of the reactant gas.


Find Patent Forward Citations

Chan, Kevin. (2010). Method for fabricating an ultra thin silicon on insulator (U.S. Patent No. 7816224). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7816224

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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