The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Mar. 05, 2008
Kevin K. Chan, Staten Island, NY (US);
Jakub Kedzierski, Lexington, MA (US);
Raymond M. Sicina, Florida, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Jakub Kedzierski, Lexington, MA (US);
Raymond M. Sicina, Florida, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In one embodiment, the invention is a method for fabricating an ultra thin silicon on insulator. One embodiment of a method for fabricating an ultra thin silicon on insulator includes providing a silicon layer, saturating the silicon layer with at least one reactant gas at a first temperature, the first temperature being low enough to substantially prevent the occurrence of any reactions involving the reactant gas, and raising the first temperature to a second temperature, the second temperature being approximately a dissociation temperature of the reactant gas.