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For the Inventor, By the Inventor

Boise, ID, United States of America

Raymond J Beffa

USPTO Granted Patents = 58 

Average Co-Inventor Count = 1.6

ph-index = 22

Forward Citations = 982(Granted Patents)

Forward Citations (Not Self Cited) = 635(Oct 12, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal53 out of 37,905 
 
Micron Technology Incorporated
 patents
silverMedal2 out of 428 
 
Round Rock Research, LLC
 patents
bronzeMedal1 out of 59 
 
Micro Technology, Inc.
 patents
4. 2 out of 832,680 
Other
 patents

Years Active: 1998-2012

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58 patents (USPTO):Explore Patents
1. 8189423 - 256 Meg dynamic random access memory (2012-05-29),
2. 7969810 - 256 Meg dynamic random access memory (2011-06-28),
3. 7885782 - Method in an integrated circuit (IC) manufacturing process for identifying and redirecting ICs mis-processed during their manufacture (2011-02-08),
4. 7875821 - Method for sorting integrated circuit devices (2011-01-25),
5. 7682847 - Method for sorting integrated circuit devices (2010-03-23),
6. 7567091 - Method for isolating a short-circuited integrated circuit (IC) from other ICs on a semiconductor wafer (2009-07-28),
7. 7502659 - Sorting a group of integrated circuit devices for those devices requiring special testing (2009-03-10),
8. 7489564 - 256 Meg dynamic random access memory (2009-02-10),
9. 7477557 - 256 Meg dynamic random access memory (2009-01-13),
10. 7477556 - 256 Meg dynamic random access memory (2009-01-13),
11. 7446277 - Method for sorting integrated circuit devices (2008-11-04),
12. 7368678 - Method for sorting integrated circuit devices (2008-05-06),
13. 7323896 - Device and method for isolating a short-circuited integrated circuit (IC) from other ICs on a semiconductor wafer (2008-01-29),
14. 7315179 - System for isolating a short-circuited integrated circuit (IC) from other ICs on a semiconductor wafer (2008-01-01),
15. 7276927 - Device and method for isolating a short-circuited integrated circuit (IC) from other ICs on a semiconductor wafer (2007-10-02),

Title: Raymond J Beffa: Pioneering Innovator in Memory Technology

Introduction:

Raymond J Beffa, a distinguished inventor based in Boise, ID (US), has made significant contributions to the field of memory technology. With an impressive portfolio of 58 patents, Beffa is renowned for his groundbreaking work in dynamic random access memory (DRAM) development.

Latest Patents:

Beffa's latest patents showcase his expertise in the design and implementation of cutting-edge memory solutions. His 256 Meg DRAM innovation features a sophisticated architecture that optimizes power distribution, enhances data processing efficiency, and includes built-in redundancy to ensure reliable performance.

Career Highlights:

Beffa's illustrious career includes tenure at prominent companies such as Micron Technology Incorporated, where he played a pivotal role in advancing memory technology. His innovative spirit and technical acumen have earned him a reputation as a trailblazer in the industry, with his work contributing to the evolution of DRAM technology.

Collaborations:

Throughout his career, Beffa has collaborated with esteemed professionals in the field, including Warren M Farnworth and Leland R Nevill. Together, they have spearheaded projects, shared insights, and worked towards pushing the boundaries of memory technology through collaborative efforts.

Conclusion:

Raymond J Beffa's prolific contributions to the field of memory technology have left an indelible mark on the industry. His inventive solutions, dedication to innovation, and collaborative spirit have set new standards in DRAM development, paving the way for the next generation of memory technologies.

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