This inventor holds 1 USPTO granted patent. Top assignee: Agence Nationale De Valorisation De La Recherche (Anvar). Active years: 1981.
Company Filing History:
Years Active: 1981
Title: The Innovations of Raymond Haran
Introduction
Raymond Haran is a notable inventor based in Grenade, France. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique process for depositing semiconductor layers.
Latest Patents
Haran holds a patent for a process titled "Process for depositing a III-V semi-conductor layer on a substrate." This process involves depositing a layer of a semiconductor composition comprising elements M(III) and M'(V) onto a substrate. The method includes contacting the substrate with a coordination compound in the gaseous phase, which stabilizes the donor/acceptor bond between the elements. The process further involves decomposing the coordination compound to deposit the semiconductor composition onto the substrate. Haran's patent is a significant advancement in semiconductor technology, with 1 patent to his name.
Career Highlights
Raymond Haran is associated with the Agence Nationale De Valorisation De La Recherche (ANVAR). His work at this institution has allowed him to focus on innovative research and development in the semiconductor field. His contributions have been instrumental in advancing the understanding and application of III-V semiconductor materials.
Collaborations
Haran has collaborated with notable colleagues such as Georges Constant and Albert Lebugle. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the field of semiconductor research.
Conclusion
Raymond Haran's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of new technologies in this area.