Location History:
- Miamisburg, OH (US) (1984 - 1988)
- Colorado Springs, CO (US) (1992)
Company Filing History:
Years Active: 1984-1992
Title: Innovations of Raymond A Turi
Introduction
Raymond A Turi is a notable inventor based in Miamisburg, OH (US). He holds a total of 8 patents that showcase his contributions to the field of memory devices. His work has significantly impacted the development of nonvolatile memory technology.
Latest Patents
Among his latest patents is the "Nonvolatile differential memory device and method." This invention features a nonvolatile memory device that includes first and second transistors connected between respective terminals and a reference potential terminal. The transistors are equipped with floating gates for storing complementary charges. Additionally, the device incorporates input lines that are capacitively coupled to the gates, along with a biasing voltage mechanism that exceeds the threshold voltage of the transistors.
Another significant patent is the "Shared line direct write nonvolatile memory cell array." This memory array consists of floating gate, direct write nonvolatile memory cells. The design allows for the interconnection of cell interiors by successive adjacent rows, enabling the sharing of column lines between adjacent columns. This innovation effectively reduces the column line pitch.
Career Highlights
Raymond A Turi is currently associated with NCR Corporation, where he continues to develop innovative memory solutions. His expertise in nonvolatile memory technology has positioned him as a key figure in the industry.
Collaborations
Throughout his career, Turi has collaborated with notable colleagues, including James A Topich and George C Lockwood. These partnerships have fostered a collaborative environment that enhances the innovation process.
Conclusion
Raymond A Turi's contributions to the field of memory devices through his patents and collaborations highlight his significant role as an inventor. His work continues to influence advancements in nonvolatile memory technology.