This inventor holds 1 USPTO granted patent. Top assignee: University of California. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Ravit Silverstein: Innovator in Silicon Carbide Synthesis
Introduction
Ravit Silverstein is an inventor based in Golea, CA (US). She has made significant contributions to the field of materials science, particularly in the synthesis of silicon carbide (SiC) matrices for ceramic matrix composites. Her innovative approach focuses on enhancing the reactive melt infiltration process, which is crucial for the fabrication of advanced materials.
Latest Patent Applications
Ravit Silverstein's notable patent application is titled "VAPOR-MEDIATED SYNTHESIS OF SILICON CARBIDE MATRICES FOR CERAMIC MATRIX COMPOSITES BY REACTIVE MELT INFILTRATION." This application describes a two-step synthesis of SiC, which includes the initial exposure of carbon surfaces to silicon vapor, followed by silicon melt infiltration. The application details the use of interrupted differential thermal analysis (DTA) of amorphous carbon and silicon powder mixtures, along with microstructure characterization, to identify the stages of the reaction. The exposure to silicon vapor results in a SiC layer characterized by nanoscale porosity, driven by the volume change associated with the reaction. This process forms a continuous pore network that facilitates subsequent melt access to the reaction front with carbon. The application discusses the temperature sensitivity of the vapor phase reaction and its implications for enhancing the reactive melt infiltration process and the fabrication of SiC matrices for ceramic composites.
Conclusion
Ravit Silverstein's work in the synthesis of silicon carbide matrices represents a significant advancement in materials science. Her innovative methods have the potential to improve the production of ceramic matrix composites, paving the way for future developments in this field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
