This inventor holds 1 USPTO granted patent. Top assignee: US Government as Represented by the Secretary of the Army. Active years: 1992.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1992
Title: The Innovations of Ravi Khanna
Introduction
Ravi Khanna is an accomplished inventor based in Somerset, NJ. He has made significant contributions to the field of semiconductor technology. His work focuses on reducing surface leakage in III-V semiconductors, which is crucial for enhancing the performance of electronic devices.
Latest Patents
Ravi Khanna holds a patent titled "Method of Reducing the Surface Leakage on a III-V Semiconductor." This innovative method involves selectively applying a mixed oxide on the surface of the semiconductor to passivate it and effectively reduce surface leakage. This advancement has the potential to improve the efficiency and reliability of semiconductor devices.
Career Highlights
Ravi Khanna is currently employed by the U.S. Government as represented by the Secretary of the Army. His role involves research and development in semiconductor technologies, where he applies his expertise to address critical challenges in the field. His dedication to innovation has led to the successful patenting of his work.
Collaborations
Ravi Khanna collaborates with Robert A. Lux, a fellow researcher. Together, they work on advancing semiconductor technologies and exploring new methods to enhance device performance.
Conclusion
Ravi Khanna's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work not only addresses current challenges but also paves the way for future developments in electronics.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile