This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Applied Materials, Inc.. Active years: 2017.
Company Filing History:
Years Active: 2017
Title: Ramakrishnan Bashyam: Innovator in Selective Epitaxial Growth
Introduction
Ramakrishnan Bashyam is a notable inventor based in San Jose, CA. He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of selective epitaxial growth. His innovative work has led to advancements that enhance the efficiency and quality of semiconductor devices.
Latest Patents
Bashyam holds a patent for a process of selective epitaxial growth for void-free gap fill. This patent, titled "Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate," outlines a method of depositing an epitaxial layer on a substrate. The process involves supplying a gas mixture with a specific ratio of dichlorosilane gas to a chlorine-containing gas, altering this ratio, and maintaining a substrate temperature between 600 degrees Celsius and 1000 degrees Celsius to fill openings formed in the substrate.
Career Highlights
Bashyam is currently employed at Applied Materials, Inc., a leading company in the semiconductor equipment industry. His work at Applied Materials has allowed him to collaborate with other talented professionals in the field, contributing to the development of cutting-edge technologies.
Collaborations
Some of his notable coworkers include Kazuyoshi Iwama and Carlos Caballero. Their collective expertise has fostered an environment of innovation and progress within the company.
Conclusion
Ramakrishnan Bashyam's contributions to selective epitaxial growth have made a significant impact on semiconductor manufacturing. His innovative methods continue to influence the industry, showcasing the importance of research and development in advancing technology.