The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Oct. 29, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Ramakrishnan Bashyam, San Jose, CA (US);

Kazuyoshi Iwama, Chiba, JP;

Peichun Lv, Singapore, SG;

Carlos Caballero, Diamond Bar, CA (US);

Taisen Kawahiro, Tokyo, JP;

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02293 (2013.01); H01L 21/02164 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01);
Abstract

Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of depositing a epitaxial layer on the substrate includes supplying a gas mixture having a first ratio of a dichlorosilane gas to a chlorine containing gas into the processing chamber, altering the gas mixture to have a second ratio of the dichlorosilane gas to the chlorine containing gas into the processing chamber, maintaining a substrate temperature of between about 600 degrees Celsius and about 1000 degrees Celsius, and filling an opening formed in a substrate.


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