This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2017.
Company Filing History:
Years Active: 2017
Title: Peichun Lv: Innovator in Selective Epitaxial Growth
Introduction
Peichun Lv is a notable inventor based in Singapore, recognized for his contributions to the field of semiconductor manufacturing. He has developed innovative methods that enhance the efficiency and quality of epitaxial layer deposition.
Latest Patents
Peichun Lv holds a patent for the "Process of selective epitaxial growth for void free gap fill." This patent describes methods and apparatuses for filling an epitaxial layer into a trench, via, or structure formed in a substrate. The invention focuses on achieving good deposition profile control and film uniformity across the substrate. In one embodiment, the method involves supplying a gas mixture with a specific ratio of dichlorosilane gas to a chlorine-containing gas, altering this ratio during the process, and maintaining a substrate temperature between 600 degrees Celsius and 1000 degrees Celsius to fill openings in the substrate effectively. He has 1 patent to his name.
Career Highlights
Peichun Lv is currently employed at Applied Materials, Inc., a leading company in the semiconductor equipment industry. His work at Applied Materials has positioned him as a key player in advancing technologies that support the manufacturing of integrated circuits.
Collaborations
Throughout his career, Peichun has collaborated with esteemed colleagues, including Kazuyoshi Iwama and Ramakrishnan Bashyam. These collaborations have contributed to the development of innovative solutions in the semiconductor field.
Conclusion
Peichun Lv's contributions to selective epitaxial growth processes demonstrate his commitment to innovation in semiconductor technology. His work continues to influence advancements in the industry, showcasing the importance of effective deposition methods.