This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Newport Fab, LLC. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Ram Asra: Semiconductor Invention and Patent
Introduction
Ram Asra is an inventor based in Irvine, California. His patent work includes a semiconductor device design intended to improve a bipolar transistor’s resistance to high-voltage breakdown.
Latest Patents
Asra is associated with 1 patent, titled “High Voltage Breakdown Resistant Bipolar Transistor.” The invention describes a bipolar transistor with a sub-collector and device layer doped with a first dopant type, along with shallow trench isolation bordering the collector. A Reduced Surface Layer (RESURF) region, doped with the opposite type, is positioned between the collector and the isolation structure to help protect the transistor against breakdown.
Career Highlights
Asra is associated with Newport Fab, LLC. His patent reflects work on semiconductor device structures and techniques for improving transistor performance under high-voltage conditions.
Collaborations
The available information identifies Newport Fab, LLC as Asra’s company affiliation but does not specify particular collaborators or joint research projects.
Conclusion
Ram Asra’s patent describes a RESURF-based approach to protecting a bipolar transistor from high-voltage breakdown, highlighting his contribution to semiconductor device innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile