The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Aug. 31, 2023
Applicant:
Newport Fab, Llc, Newport Beach, CA (US);
Inventors:
Ram Asra, Irvine, CA (US);
Edward Preisler, San Clemente, CA (US);
Assignee:
Newport Fab, LLC, Newport Beach, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 10/00 (2025.01); H10D 10/01 (2025.01); H10D 62/13 (2025.01); H10P 30/20 (2026.01);
U.S. Cl.
CPC ...
H10D 62/109 (2025.01); H10D 10/00 (2025.01); H10D 10/01 (2025.01); H10D 62/115 (2025.01); H10D 62/138 (2025.01); H10P 30/204 (2026.01); H10P 30/21 (2026.01);
Abstract
A bipolar transistor includes a sub-collector doped with a first dopant type and situated in a semiconductor substrate, a device layer doped with the first dopant type situated over the sub-collector, and a shallow trench isolation (STI) situated in the device layer and bordering a collector of the bipolar transistor. The bipolar transistor further includes a Reduced Surface Layer (RESURF) region doped with a second dopant type opposite the first dopant type situated between the collector and the STI, wherein the RESURF region protects against breakdown of the bipolar transistor.