This inventor holds 1 USPTO granted patent. Top assignee: US Government as Represented by the Secretary of the Army. Active years: 1986.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1986
Title: Ralph J Matarese: Innovator in High Power High Frequency Transistors
Introduction
Ralph J Matarese is a notable inventor based in Trenton, NJ (US). He has made significant contributions to the field of electronics, particularly in the development of high power high frequency field effect transistors. His innovative work has led to the creation of a unique patent that enhances the performance of these devices.
Latest Patents
Matarese holds a patent for a "Vertical MESFET with air spaced gate electrode." This invention describes a high power high frequency field effect transistor achieved through a vertical structure of gallium arsenide. The design includes a semi-insulating substrate, a conductive layer over the substrate, and a narrow-central post with small metal gate electrodes on each side. The configuration allows for increased power output from a cellular unit that incorporates two parallel source stripes, four gates, and three drains. The drains are interconnected by the conductive layer and a drain pad, while the gates are linked by a gate pad on the outer region of the substrate. The patent also outlines a method for fabricating this advanced structure.
Career Highlights
Ralph J Matarese is currently employed by the US Government as represented by the Secretary of the Army. His role involves working on cutting-edge technologies that support military applications and enhance electronic systems. His expertise in the field has positioned him as a valuable asset in the development of innovative solutions.
Collaborations
Matarese has collaborated with Ho-Chung Huang, contributing to advancements in their respective fields. Their partnership has fostered innovation and has led to the successful development of new technologies.
Conclusion
Ralph J Matarese's contributions to the field of high power high frequency transistors exemplify his innovative spirit and dedication to advancing technology. His patent and work with the US Government highlight his significant impact on the electronics industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile