The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 1986
Filed:
Sep. 20, 1984
Ho-Chung Huang, Princeton Junction, NJ (US);
Ralph J Matarese, Trenton, NJ (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
A high power high frequency field effect transistor is achieved with a vertical structure of gallium arsenide including a semi-insulating substrate, a conductive layer over the substrate, a narrow-central post having small metal gate electrodes on each side, metal drain electrodes on the conductive layer spaced from the central post and a metal source electrode supported on the central post. A deep channel around the post separates the metal drains, gates and source. Increased power is obtained from a cellular unit including two parallel source stripes, four gates and three drains. The drains are connected together by the conductive layer and a drain pad at one end, and the gates are connected at the other end by a gate pad on an outer region of the substrate. The gate connections to the pad are isolated from the conductive layer by a bridge over a space etched in the lower layer. A method for fabrication of this structure is also provided.