This inventor holds 3 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignee: Intel Corporation. Active years: 2022-2026.
Company Filing History:
Years Active: 2022-2026
Title: Rakan Maddah: Innovator in Memory Device Technology
Introduction
Rakan Maddah is a notable inventor based in Portland, OR (US). He has made significant contributions to the field of memory device technology, particularly in reducing write disturb refresh rates. His innovative approach has the potential to enhance performance in memory devices.
Latest Patents
Rakan Maddah holds a patent for a technology titled "Write Disturb Refresh Rate Reduction Using Write History Buffer." This invention addresses the issue of write disturb in memory devices. By utilizing a write history buffer, the technology enables a reduction in the write disturb refresh rate, thereby improving overall performance. The memory device includes circuitry that spaces consecutive write commands to the same address by a specific amount of time. This spacing reduces the incidences of write disturb, leading to a more efficient memory operation.
Career Highlights
Rakan Maddah is currently employed at Intel Corporation, where he continues to develop innovative solutions in memory technology. His work focuses on enhancing the performance and reliability of memory devices through advanced techniques.
Collaborations
Rakan collaborates with talented coworkers, including Akanksha Mehta and Benjamin Graniello. Together, they contribute to the advancement of technology at Intel Corporation.
Conclusion
Rakan Maddah's contributions to memory device technology exemplify the impact of innovative thinking in the field. His patent on reducing write disturb refresh rates showcases his commitment to improving performance in memory devices.