Sunnyvale, CA, United States of America

Rajiv Gopal Pethe

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Innovations by Rajiv Gopal Pethe

Introduction

Rajiv Gopal Pethe is a notable inventor based in Sunnyvale, California. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on the development of thin semiconductor films with tailored properties.

Latest Patents

Rajiv Gopal Pethe holds a patent for "Collimated sputtering of semiconductor and other films." This patent describes a method for obtaining thin semiconductor films or layers with a pre-selected degree of crystallinity. The process involves selecting an appropriate aspect ratio for a collimator used during sputtering. This technique allows for the formation of highly crystalline films at temperatures significantly below the annealing temperature of the sputtered material. The method also enables the reduction of trapped charge defects by grounding the collimator, which provides electrical isolation between charged plasma particles and the substrate. This innovation facilitates the fabrication of high transconductance devices with improved electrically active interfaces.

Career Highlights

Rajiv Gopal Pethe is currently associated with Applied Komatsu Technology, Inc. His work has been instrumental in advancing semiconductor fabrication techniques. He has a patent count of 1 patent, showcasing his contributions to the field.

Collaborations

Throughout his career, Rajiv has collaborated with notable professionals such as Richard Ernest Demaray and Chandra V Deshpandey. These collaborations have further enriched his work and innovations in semiconductor technology.

Conclusion

Rajiv Gopal Pethe's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of high-performance semiconductor devices.

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