Palo Alto, CA, United States of America

Raisa Pavlyunchkova

This inventor holds 1 USPTO granted patent. Top assignees: Radiation Monitoring Devices, Inc., Varian Medical Systems Technologies, Inc.. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Raisa Pavlyunchkova. Retrieved from https://idiyas.com/inventor/raisa-pavlyunchkova

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Innovations by Raisa Pavlyunchkova

Introduction

Raisa Pavlyunchkova is a notable inventor based in Palo Alto, California. She has made significant contributions to the field of semiconductor technology, particularly in reducing dark current in semiconducting films. Her innovative approach has implications for enhancing the performance of semiconductor devices.

Latest Patents

Raisa holds a patent for a process designed to reduce the dark current in semiconducting films. This method involves coating the joined crystals within a semiconductor conversion layer to minimize dark current without compromising the sensitivity of the conversion layer. The patent also describes a semiconductor conversion layer that consists of multiple joined crystals, permeated by a polymer material and featuring microscopic voids.

Career Highlights

Throughout her career, Raisa has worked with prominent companies in the technology sector. She has been associated with Varian Medical Systems Technologies, Inc. and Radiation Monitoring Devices, Inc. Her work in these organizations has allowed her to apply her innovative ideas in practical settings, contributing to advancements in medical and radiation monitoring technologies.

Collaborations

Raisa has collaborated with several professionals in her field, including George Zentai and Larry D Partain. These collaborations have likely enriched her work and expanded the impact of her inventions.

Conclusion

Raisa Pavlyunchkova's contributions to semiconductor technology exemplify the importance of innovation in enhancing device performance. Her patent and career achievements reflect her dedication to advancing technology in meaningful ways.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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