The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2006

Filed:

Nov. 04, 2003
Applicants:

George Zentai, Mountain View, CA (US);

Larry D. Partain, Los Altos, CA (US);

Raisa Pavlyunchkova, Palo Alto, CA (US);

Kanai S. Shah, Newton, MA (US);

Paul R. Bennett, Acton, MA (US);

Inventors:

George Zentai, Mountain View, CA (US);

Larry D. Partain, Los Altos, CA (US);

Raisa Pavlyunchkova, Palo Alto, CA (US);

Kanai S. Shah, Newton, MA (US);

Paul R. Bennett, Acton, MA (US);

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of coating the joined crystals within a semiconductor conversion layer to reduce the dark current without compromising the sensitivity of the conversion layer is presented. A semiconductor conversion layer comprising a plurality of joined crystals and permeated by a polymer material and having microscopic voids is also presented.


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