Graz, Austria

Rainer Holzhaider

This inventor holds 1 USPTO granted patent. Top assignee: Ams Ag. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rainer Holzhaider. Retrieved from https://idiyas.com/inventor/rainer-holzhaider

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Rainer Holzhaider: Pioneering Innovator in Semiconductor Technology

Introduction: Rainer Holzhaider, a renowned inventor based in Graz, Austria, is setting new benchmarks in the field of semiconductor technology. With a deep-rooted passion for innovation and a relentless pursuit of excellence, Holzhaider continues to inspire the next generation of inventors and shape the future of technology.

Latest Patents: Rainer Holzhaider's most recent patent is for a "Semiconductor device with through-substrate via and corresponding method of manufacture." This groundbreaking invention involves the arrangement of a dielectric layer and a passivation layer on the main surface of a semiconductor substrate, along with the embedding of a metal layer above an opening in the substrate. The metallization in the opening forms a through-substrate via to the rear surface of the substrate, with additional layers stabilizing the bottom of the via. This innovative approach showcases Holzhaider's expertise and ingenuity in the semiconductor industry.

Career Highlights: As a key figure at Ams AG, a leading semiconductor company, Rainer Holzhaider has made significant contributions to the advancement of semiconductor technology. His strategic insights and technical acumen have played a pivotal role in driving forward the company's innovation agenda. With a strong focus on research and development, Holzhaider has spearheaded numerous projects that have pushed the boundaries of what is possible in the field of semiconductors.

Collaborations: Holzhaider's collaborative spirit is evident in his work with esteemed colleagues such as Franz Schrank and Sara Carniello. Together, they have leveraged their collective expertise to achieve breakthroughs in semiconductor technology and bring cutting-edge solutions to the market. Through effective teamwork and shared vision, Holzhaider and his coworkers have established a culture of innovation and excellence within their organization.

Conclusion: Rainer Holzhaider's remarkable journey as an inventor and innovator exemplifies the power of perseverance, creativity, and collaboration in driving technological advancement. His pioneering work in semiconductor technology has not only transformed the industry but also inspired a new wave of inventors to push the boundaries of innovation further. As we look to the future, Holzhaider's legacy will continue to shape the landscape of technology and pave the way for exciting developments yet to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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